MOS substitution: Difference between revisions
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* the perfect generator of the filling MOS corresponds to advancing from ''C''<sub>''i''</sub> to ''C''<sub>''i''+1</sub>; | * the perfect generator of the filling MOS corresponds to advancing from ''C''<sub>''i''</sub> to ''C''<sub>''i''+1</sub>; | ||
* the imperfect generator of the filling MOS corresponds to looping back to ''C''<sub>1</sub> but on the next note of ''C''<sub>1</sub>, so it and the ''q'' − 1 notes thereafter are advanced by 1 note from any predecessor notes in the chains. | * the imperfect generator of the filling MOS corresponds to looping back to ''C''<sub>1</sub> but on the next note of ''C''<sub>1</sub>, so it and the ''q'' − 1 notes thereafter are advanced by 1 note from any predecessor notes in the chains. | ||
If we call rank-3 scales with such lattice shapes ''almost parallelogram-shaped'', MOS substitution scales are thus almost-parallelogram-like, but the converse is false, as the scale in 5 letters [9/8 28/27 9/8 64/63 9/8 28/27 243/224 28/27 64/63 567/512 64/63] is almost parallelogram-like. | |||
== Open questions == | == Open questions == | ||