MOS substitution: Difference between revisions
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..., ''C''<sub>''q''</sub> of the aggregate generator, and the offset between ''C''<sub>''i''</sub> and ''C''<sub>''i''+1</sub> is equal to the result of substituting the perfect generator of the filling MOS into the generator of the template MOS. Hence in the GS, | ..., ''C''<sub>''q''</sub> of the aggregate generator, and the offset between ''C''<sub>''i''</sub> and ''C''<sub>''i''+1</sub> is equal to the result of substituting the perfect generator of the filling MOS into the generator of the template MOS. Hence in the GS, | ||
* the perfect generator of the filling MOS corresponds to advancing from ''C''<sub>''i''</sub> to ''C''<sub>''i''+1</sub>; | * the perfect generator of the filling MOS corresponds to advancing from ''C''<sub>''i''</sub> to ''C''<sub>''i''+1</sub>; | ||
* the imperfect generator of the filling MOS corresponds to looping back to ''C''<sub>1</sub> but on the next note of ''C''<sub>1</sub>, so it and the ''q'' − 1 notes thereafter are advanced by 1 note from any | * the imperfect generator of the filling MOS corresponds to looping back to ''C''<sub>1</sub> but on the next note of ''C''<sub>1</sub>, so it and the ''q'' − 1 notes thereafter are advanced by 1 note from any predecessor notes in the chains. | ||
== Open questions == | == Open questions == | ||