MOS substitution: Difference between revisions
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'''MOS substitution''' is a procedure for obtaining a ternary (3 step sizes) scale from two [[MOS]] patterns. It consists of substituting the step pattern of one MOS pattern (called the filling MOS), scale step for scale step, for all occurrences of a chosen step size of another MOS pattern (called the template MOS). Unlike MV3 scales, a MOS substitution scale may have any combination of step sizes. | '''MOS substitution''' is a procedure for obtaining a ternary (3 step sizes) scale from two [[MOS]] patterns. It consists of substituting the step pattern of one MOS pattern (called the ''filling MOS''), scale step for scale step, for all occurrences of a chosen step size of another MOS pattern (called the ''template MOS''). Unlike MV3 scales, a MOS substitution scale may have any combination of step sizes. | ||
[[Aberrismic theory]] uses MOS substitution. In fact, groundfault reports having come up with a similar concept but not following up on it. | [[Aberrismic theory]] uses MOS substitution. In fact, groundfault reports having come up with a similar concept but not following up on it. | ||
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== Formal definition == | == Formal definition == | ||
A ternary scale word ''w''('''x'''<sub>1</sub>, '''x'''<sub>2</sub>, '''x'''<sub>3</sub>) is a ''MOS substitution'' scale word if there exists a permutation <math>\pi \in S_3</math> such that the following holds: | |||
* identifying '''x'''<sub>π(1)</sub> and '''x'''<sub>π(2)</sub> results in a MOS (called the ''template MOS'') and | |||
* deleting all instances of '''x'''<sub>π(3)</sub> (called the ''slot letter'') results in a MOS (called the ''filling MOS''). | |||
== Original derivation == | == Original derivation == | ||